| ‘lllvVISHAYQV TDD wwwymhayeom a 0.1 lnstantaneous FonNard Current (A) instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous FonNard Characteristics T00 10 Current (DA) :1 am instantaneous Reverse Leakage Percent of Rated Peak Reverse Voltage (%) Fig. A - Typical Reverse Leakage Characteristics FGP30B, FGP30C, FGP30D Vishay General Semiconductor TOD Junction Capacitance (pF) T 0 Reverse Voltage (V) Fig. 5 - Typical Junction Capacitance Transient Thermal impedance (“C/W) t - Pulse Duration (S) Fig. 6 - Typical Transient Thermal Impedance PACKAGE ouTLINE DIMENSIONS in inches (millimeters) Do-204Ac (D0-15) <> 1 D(25.A]MlN. Ll0.300 (7.6)0.230 (5.0)llalL‘ 0.140 (3.5)DIA. lk0.034 (0.86)0.020 (0.71)DIA t D(25.A]MlN. Revision: 12?Dec-13 3For technical questions within your region: DiodesArnericas@vishay.com, DiodesAsia@vishay.com, DiodesEurcpe@vishay.com ‘ 0.104 (2.6) Document N umber: 88878 THIS DOCUMENT IS SUBJECT To CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 |